RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88A2B-3C 512MB
G Skill Intl F4-3466C16-8GTZKW 8GB
Compare
Nanya Technology M2Y51264TU88A2B-3C 512MB vs G Skill Intl F4-3466C16-8GTZKW 8GB
Overall score
Nanya Technology M2Y51264TU88A2B-3C 512MB
Overall score
G Skill Intl F4-3466C16-8GTZKW 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2Y51264TU88A2B-3C 512MB
Report a bug
Faster write speed, GB/s
874.3
12.6
Average value in the tests
Reasons to consider
G Skill Intl F4-3466C16-8GTZKW 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
81
Around -189% lower latency
Faster reading speed, GB/s
17.5
1
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2Y51264TU88A2B-3C 512MB
G Skill Intl F4-3466C16-8GTZKW 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
81
28
Read speed, GB/s
1,885.7
17.5
Write speed, GB/s
874.3
12.6
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
277
3104
Nanya Technology M2Y51264TU88A2B-3C 512MB RAM comparisons
Kingston 99U5315-012.A00LF 512MB
Kingston 9905598-009.A00G 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
Nanya Technology M2Y51264TU88A2B-3C 512MB
G Skill Intl F4-3466C16-8GTZKW 8GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2800C15-8GTZB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMA82GU6JJR8N-VK 16GB
Kingston 99U5403-492.A00LF 8GB
Avant Technology J641GU49J2320NE 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT8G4DFD824A.C16FDD2 8GB
Samsung M393B2G70BH0-CK0 16GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905643-009.A00G 8GB
Kingston KTC1G-UDIMM 1GB
Kingston 9905624-008.A00G 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-3200C14-16GTZKW 16GB
Report a bug
×
Bug description
Source link