RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88B0B-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Compare
Nanya Technology M2Y51264TU88B0B-3C 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Overall score
Nanya Technology M2Y51264TU88B0B-3C 512MB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2Y51264TU88B0B-3C 512MB
Report a bug
Faster reading speed, GB/s
3
10
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Report a bug
Below the latency in the PassMark tests, ns
30
54
Around -80% lower latency
Faster write speed, GB/s
8.5
1,308.1
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2Y51264TU88B0B-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
54
30
Read speed, GB/s
3,573.5
10.0
Write speed, GB/s
1,308.1
8.5
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
371
2234
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM comparisons
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB RAM comparisons
Corsair CML16GX3M2A1600C10 8GB
Kingston 9905402-665.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673EH1-CF8 2GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMR32GX4M2C3200C16 16GB
A-DATA Technology DDR3 1600 4GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingmax Semiconductor GLAG43F-18---------- 8GB
Kingston 9905403-038.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3600C16-32GTZN 32GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMT32GX4M2K4000C19 16GB
Kingston 99U5474-038.A00LF 4GB
Essencore Limited KD44GU480-26N160T 4GB
A-DATA Technology DDR3 1600 4GB
Essencore Limited KD4AGU880-36A180X 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMD32GX4M4B3333C16 8GB
Kingston KVR533D2N4 512MB
Corsair CMD32GX4M4A2800C16 8GB
Report a bug
×
Bug description
Source link