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Nanya Technology NT4GC64C88B1NS-DI 4GB
Samsung M393A5143DB0-CRC 4GB

Nanya Technology NT4GC64C88B1NS-DI 4GB vs Samsung M393A5143DB0-CRC 4GB

Overall score
star star star star star
Nanya Technology NT4GC64C88B1NS-DI 4GB

Nanya Technology NT4GC64C88B1NS-DI 4GB

Overall score
star star star star star
Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

Differences Specifications Comments

Differences

Nanya Technology NT4GC64C88B1NS-DI 4GB Reasons to consider
Nanya Technology NT4GC64C88B1NS-DI 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 47
    Around 40% lower latency
  • Faster reading speed, GB/s
    12.8 left arrow 10
    Average value in the tests
  • Faster write speed, GB/s
    8.4 left arrow 7.5
    Average value in the tests
Samsung M393A5143DB0-CRC 4GB Reasons to consider
Samsung M393A5143DB0-CRC 4GB
Report a bug
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology NT4GC64C88B1NS-DI 4GB
Samsung M393A5143DB0-CRC 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 47
  • Read speed, GB/s
    12.8 left arrow 10.0
  • Write speed, GB/s
    8.4 left arrow 7.5
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2226 left arrow 2308

Nanya Technology NT4GC64C88B1NS-DI 4GB RAM comparisons

Ramaxel Technology RMT3170ME68F9F1600 4GB
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Samsung M393A5143DB0-CRC 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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