RAM comparison Samsung DDR3 8GB 1600MHz 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Samsung DDR3 8GB 1600MHz 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Overall score

Samsung DDR3 8GB 1600MHz 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB

Below the latency in the PassMark tests, ns

43 122

Around 65% lower latency
Faster reading speed, GB/s

14.9 9.4

Average value in the tests
Faster write speed, GB/s

9.6 5.8

Average value in the tests

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Complete list of technical specifications

Samsung DDR3 8GB 1600MHz 8GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Main characteristics

Other

Description

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2506 1411

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns