Samsung DDR3 8GB 1600MHz 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 122

左右 65% 更低的延时
更快的读取速度，GB/s

14.9 9.4

测试中的平均数值
更快的写入速度，GB/s

9.6 5.8

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 122
读取速度，GB/s

14.9 9.4
写入速度，GB/s

9.6 5.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 1411

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSA.M8FADM 4GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CM4X8GE3000C15K4 8GB

Corsair CM4X8GE3000C15K4 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Corsair CMK16GX4M2K4266C19 8GB

Corsair CMK16GX4M2K4266C19 8GB

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G Skill Intl F4-2400C15-8GRR 8GB