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Samsung DDR3 8GB 1600MHz 8GB
Micron Technology AFLD416EH1P 16GB

Samsung DDR3 8GB 1600MHz 8GB vs Micron Technology AFLD416EH1P 16GB

Overall score
star star star star star
Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Overall score
star star star star star
Micron Technology AFLD416EH1P 16GB

Micron Technology AFLD416EH1P 16GB

Differences Specifications Comments

Differences

Samsung DDR3 8GB 1600MHz 8GB Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
  • Faster reading speed, GB/s
    14.9 left arrow 13.7
    Average value in the tests
  • Faster write speed, GB/s
    9.6 left arrow 6.9
    Average value in the tests
Micron Technology AFLD416EH1P 16GB Reasons to consider
Micron Technology AFLD416EH1P 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 43
    Around -54% lower latency
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology AFLD416EH1P 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    43 left arrow 28
  • Read speed, GB/s
    14.9 left arrow 13.7
  • Write speed, GB/s
    9.6 left arrow 6.9
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2506 left arrow 2312

Samsung DDR3 8GB 1600MHz 8GB RAM comparisons

A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 3200 8GB

Micron Technology AFLD416EH1P 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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