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Samsung M3 78T2863QZS-CF7 1GB
Intg. Silicon Solutions MLLSE 800 2GB 2GB

Samsung M3 78T2863QZS-CF7 1GB vs Intg. Silicon Solutions MLLSE 800 2GB 2GB

Overall score
star star star star star
Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Overall score
star star star star star
Intg. Silicon Solutions MLLSE 800 2GB 2GB

Intg. Silicon Solutions MLLSE 800 2GB 2GB

Differences Specifications Comments

Differences

Samsung M3 78T2863QZS-CF7 1GB Reasons to consider
Samsung M3 78T2863QZS-CF7 1GB
Report a bug
  • Faster write speed, GB/s
    1,857.7 left arrow 1,842.2
    Average value in the tests
Intg. Silicon Solutions MLLSE 800 2GB 2GB Reasons to consider
Intg. Silicon Solutions MLLSE 800 2GB 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    50 left arrow 69
    Around -38% lower latency
  • Faster reading speed, GB/s
    4 left arrow 4
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M3 78T2863QZS-CF7 1GB
Intg. Silicon Solutions MLLSE 800 2GB 2GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    69 left arrow 50
  • Read speed, GB/s
    4,217.2 left arrow 4,386.7
  • Write speed, GB/s
    1,857.7 left arrow 1,842.2
  • Memory bandwidth, mbps
    6400 left arrow 6400
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • Ranking PassMark (The more the better)
    668 left arrow 718

Samsung M3 78T2863QZS-CF7 1GB RAM comparisons

Samsung M3 78T2953EZ3-CE7 1GB
Kingston 99U5712-002.A00G 16GB

Intg. Silicon Solutions MLLSE 800 2GB 2GB RAM comparisons

G Skill Intl F4-2666C19-8GRS 8GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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