RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL8G26C16U4B.8FE 8GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology BL8G26C16U4B.8FE 8GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Crucial Technology BL8G26C16U4B.8FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
17.1
Average value in the tests
Reasons to consider
Crucial Technology BL8G26C16U4B.8FE 8GB
Report a bug
Below the latency in the PassMark tests, ns
31
46
Around -48% lower latency
Faster write speed, GB/s
12.9
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
21300
3200
Around 6.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL8G26C16U4B.8FE 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
31
Read speed, GB/s
2,909.8
17.1
Write speed, GB/s
1,519.2
12.9
Memory bandwidth, mbps
3200
21300
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
3-3-3-12 / 400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
241
3222
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Crucial Technology BL8G26C16U4B.8FE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-3600C16-8GVK 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Mushkin 99[2/7/4]202F 4GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMSX16GX4M2A3000C18 8GB
Kingston 9905584-016.A00LF 4GB
Samsung M471A2G43BB2-CWE 16GB
SK Hynix HYMP512S64CP8-Y5 1GB
Crucial Technology CT8G4SFS824A.C8FDD1 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Kingston 9905469-143.A00LF 4GB
Samsung M471A1A43CB1-CRC 8GB
A-DATA Technology VDQVE1B16 2GB
Avant Technology W641GU67J5213N8 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Corsair CMU16GX4M2C3000C15 8GB
Kingston 9965662-016.A00G 16GB
Corsair CMD64GX4M8X3800C19 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston KHX2133C15S4/8G 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2400C15-4GIS 4GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
Report a bug
×
Bug description
Source link