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Samsung M391B5273CH0-CH9 4GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Samsung M391B5273CH0-CH9 4GB vs Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Overall score
star star star star star
Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

Overall score
star star star star star
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Differences Specifications Comments

Differences

Samsung M391B5273CH0-CH9 4GB Reasons to consider
Samsung M391B5273CH0-CH9 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 52
    Around 48% lower latency
  • Faster reading speed, GB/s
    13.4 left arrow 10
    Average value in the tests
  • Faster write speed, GB/s
    8.4 left arrow 7.6
    Average value in the tests
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB Reasons to consider
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Report a bug
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M391B5273CH0-CH9 4GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 52
  • Read speed, GB/s
    13.4 left arrow 10.0
  • Write speed, GB/s
    8.4 left arrow 7.6
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2275 left arrow 2169

Samsung M391B5273CH0-CH9 4GB RAM comparisons

Samsung M391B5273DH0-CH9 4GB
Corsair CMR32GX4M2C3333C16 16GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
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