Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB vs Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Overall score
star star star star star
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Overall score
star star star star star
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Differences

  • Faster reading speed, GB/s
    20.5 left arrow 18.6
    Average value in the tests
  • Faster write speed, GB/s
    15.5 left arrow 14.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 17000
    Around 1.51% higher bandwidth
  • Below the latency in the PassMark tests, ns
    21 left arrow 31
    Around -48% lower latency

Specifications

Complete list of technical specifications
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    31 left arrow 21
  • Read speed, GB/s
    20.5 left arrow 18.6
  • Write speed, GB/s
    15.5 left arrow 14.0
  • Memory bandwidth, mbps
    25600 left arrow 17000
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15 16
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    3649 left arrow 3356
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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