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takeMS International AG TMS2GB264D083805EV 2GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

takeMS International AG TMS2GB264D083805EV 2GB vs Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Overall score
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Overall score
star star star star star
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Differences Specifications Comments

Differences

takeMS International AG TMS2GB264D083805EV 2GB Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 16.8
    Average value in the tests
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB Reasons to consider
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    35 left arrow 50
    Around -43% lower latency
  • Faster write speed, GB/s
    13.7 left arrow 1,457.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    50 left arrow 35
  • Read speed, GB/s
    3,757.3 left arrow 16.8
  • Write speed, GB/s
    1,457.4 left arrow 13.7
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    557 left arrow 3306

takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
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