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takeMS International AG TMS2GB264D083805EV 2GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Compare
takeMS International AG TMS2GB264D083805EV 2GB vs Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Overall score
takeMS International AG TMS2GB264D083805EV 2GB
Overall score
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
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Faster reading speed, GB/s
3
16.8
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Report a bug
Below the latency in the PassMark tests, ns
35
50
Around -43% lower latency
Faster write speed, GB/s
13.7
1,457.4
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
50
35
Read speed, GB/s
3,757.3
16.8
Write speed, GB/s
1,457.4
13.7
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
557
3306
takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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