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Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB
Comparez
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB
Signaler un bogue
Vitesse d'écriture plus rapide, GB/s
4.5
4.4
Valeur moyenne dans les tests
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB
Signaler un bogue
En dessous de la latence dans les tests PassMark, ns
28
46
Autour de -64% latence réduite
Vitesse de lecture plus rapide, GB/s
7.7
4.8
Valeur moyenne dans les tests
Spécifications
Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB
Principales caractéristiques
Type de mémoire
DDR3
DDR3
Latence dans PassMark, ns
46
28
Vitesse de lecture, GB/s
4.8
7.7
Vitesse d'écriture, GB/s
4.5
4.4
Largeur de bande de la mémoire, mbps
10600
10600
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9
Timings / Vitesse d'horloge
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
Classement PassMark (Plus il y en a, mieux c'est)
1046
1175
Hynix Semiconductor (Hyundai Electronics) HMT351R7EFR4A-H9 4GB Comparaison des RAM
Golden Empire CL15-17-17 D4-2666 8GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8A-H9 4GB Comparaison des RAM
Kingston ACR256X64D3S1333C9 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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Signaler un bogue
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Bug description
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