G Skill Intl F3-1600C9-8GXM 8GB vs Samsung M393A2G40DBD-CP1???? 16GB

Punteggio complessivo

G Skill Intl F3-1600C9-8GXM 8GB

G Skill Intl F3-1600C9-8GXM 8GB

Punteggio complessivo

Samsung M393A2G40DBD-CP1???? 16GB

Samsung M393A2G40DBD-CP1???? 16GB

Differenze Specifiche tecniche Commenti

Differenze

G Skill Intl F3-1600C9-8GXM 8GB

Motivi da considerare
G Skill Intl F3-1600C9-8GXM 8GB

Velocità di lettura più elevata, GB/s

14.3 9.6

Valore medio nei test
Velocità di scrittura più elevata, GB/s

8.8 5.8

Valore medio nei test

Samsung M393A2G40DBD-CP1???? 16GB

Motivi da considerare
Samsung M393A2G40DBD-CP1???? 16GB

Al di sotto della latenza nei test PassMark, ns

34 41

Intorno -21% latenza inferiore
Larghezza di banda di memoria superiore, mbps

17000 10600

Intorno 1.6 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

G Skill Intl F3-1600C9-8GXM 8GB

Samsung M393A2G40DBD-CP1???? 16GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

41 34
Velocità di lettura, GB/s

14.3 9.6
Velocità di scrittura, GB/s

8.8 5.8
Larghezza di banda della memoria, mbps

10600 17000

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

2458 1839

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Ultimi confronti

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

SK Hynix HMA81GR7AFR8N-VK 8GB

SK Hynix HMA81GR7AFR8N-VK 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Mushkin 99[2/7/4]191F 4GB

Mushkin 99[2/7/4]191F 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Corsair CMD16GX4M4A2666C16 4GB

Corsair CMD16GX4M4A2666C16 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

SK Hynix HMA84GR7MFR4N-TF 32GB

SK Hynix HMA84GR7MFR4N-TF 32GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Crucial Technology CT4G4DFS8266.M8FE 4GB

Crucial Technology CT4G4DFS8266.M8FE 4GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Ramaxel Technology RMUA5110MD78HAF-2666 8GB

Ramaxel Technology RMUA5110MD78HAF-2666 8GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Samsung M471A4G43AB1-CWE 32GB

Samsung M471A4G43AB1-CWE 32GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Maxsun MSD44G24Q3 4GB

Maxsun MSD44G24Q3 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMU32GX4M2C3000C16 16GB

Corsair CMU32GX4M2C3000C16 16GB