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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Punteggio complessivo
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Differenze Specifiche tecniche Commenti

Specifiche tecniche

Elenco completo delle specifiche tecniche
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Caratteristiche principali
  • Tipo di memoria
    DDR4 left arrow DDR4
  • Latenza in PassMark, ns
    24 left arrow 24
  • Velocità di lettura, GB/s
    16.0 left arrow 16.0
  • Velocità di scrittura, GB/s
    12.5 left arrow 12.5
  • Larghezza di banda della memoria, mbps
    19200 left arrow 19200
Other
  • Descrizione
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Temporizzazioni / Velocità di clock
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Classifica PassMark (più sono, meglio è)
    2925 left arrow 2925

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB Confronto tra le RAM

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB Confronto tra le RAM

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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