RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Comparar
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Pontuação geral
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Pontuação geral
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Diferenças
Especificações
Comentários
Diferenças
Razões a considerar
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Relatar um erro
Razões a considerar
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Relatar um erro
Especificações
Lista completa de especificações técnicas
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Características principais
Tipo de memória
DDR4
DDR4
Latência em PassMark, ns
24
24
Velocidade de leitura, GB/s
16.0
16.0
Velocidade de escrita, GB/s
12.5
12.5
Largura de banda de memória, mbps
19200
19200
Other
Descrição
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Tempos / Velocidade do relógio
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (Quanto mais, melhor)
2925
2925
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB Comparações de RAM
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB Comparações de RAM
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Últimas comparações
Kingston 9905403-515.A00LF 8GB
Corsair CM4X4GD3000C15K4 4GB
Kingston 9905403-156.A00LF 2GB
Kingston 9965600-012.A02G 16GB
Samsung M471B5173QH0-YK0 4GB
Samsung M378A1K43DB2-CTD 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9905701-022.A00G 16GB
Samsung M471B5273CH0-CH9 4GB
Samsung M393A4K40CB1-CRC 32GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Teikon TMA851U6AFR6N-UHHC 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Kingston KHX3600C18D4/32GX 32GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M471B5273CH0-CH9 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A1K43BB0-CPB 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
Kingston 9905403-515.A00LF 8GB
Kingston KF3200C16D4/16GX 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
SK Hynix HMA851S6JJR6N-VK 4GB
Relatar um erro
×
Bug description
Source link