Samsung M378B5673FH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Punteggio complessivo

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Punteggio complessivo

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B5673FH0-CH9 2GB

Motivi da considerare
Samsung M378B5673FH0-CH9 2GB

Velocità di lettura più elevata, GB/s

14.4 9.6

Valore medio nei test
Velocità di scrittura più elevata, GB/s

9.5 7.6

Valore medio nei test

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Al di sotto della latenza nei test PassMark, ns

34 35

Intorno -3% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M378B5673FH0-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4C-H9 8GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

35 34
Velocità di lettura, GB/s

14.4 9.6
Velocità di scrittura, GB/s

9.5 7.6
Larghezza di banda della memoria, mbps

10600 10600

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Classifica PassMark (più sono, meglio è)

2321 2050

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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