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Samsung M395T2863QZ4-CF76 1GB
takeMS International AG TMS2GS264D081805AV 2GB

Samsung M395T2863QZ4-CF76 1GB vs takeMS International AG TMS2GS264D081805AV 2GB

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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Punteggio complessivo
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takeMS International AG TMS2GS264D081805AV 2GB

takeMS International AG TMS2GS264D081805AV 2GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M395T2863QZ4-CF76 1GB Motivi da considerare
Samsung M395T2863QZ4-CF76 1GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    3 left arrow 2
    Valore medio nei test
takeMS International AG TMS2GS264D081805AV 2GB Motivi da considerare
takeMS International AG TMS2GS264D081805AV 2GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    86 left arrow 104
    Intorno -21% latenza inferiore
  • Velocità di scrittura più elevata, GB/s
    891.6 left arrow 2,404.5
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M395T2863QZ4-CF76 1GB
takeMS International AG TMS2GS264D081805AV 2GB
Caratteristiche principali
  • Tipo di memoria
    DDR2 left arrow DDR2
  • Latenza in PassMark, ns
    104 left arrow 86
  • Velocità di lettura, GB/s
    3,192.0 left arrow 2,444.5
  • Velocità di scrittura, GB/s
    2,404.5 left arrow 891.6
  • Larghezza di banda della memoria, mbps
    6400 left arrow 6400
Other
  • Descrizione
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
  • Temporizzazioni / Velocità di clock
    no data left arrow 5-5-5-15 / 800 MHz
  • Classifica PassMark (più sono, meglio è)
    786 left arrow 322

Samsung M395T2863QZ4-CF76 1GB Confronto tra le RAM

Micron Technology 8HTF12864HDZ-800E1 1GB

takeMS International AG TMS2GS264D081805AV 2GB Confronto tra le RAM

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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