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Samsung M471B5273CH0-YK0 4GB
SK Hynix HMT425S6AFR6A-PB 2GB

Samsung M471B5273CH0-YK0 4GB vs SK Hynix HMT425S6AFR6A-PB 2GB

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Samsung M471B5273CH0-YK0 4GB

Samsung M471B5273CH0-YK0 4GB

Punteggio complessivo
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SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471B5273CH0-YK0 4GB Motivi da considerare
Samsung M471B5273CH0-YK0 4GB
Segnala un bug
  • Velocità di scrittura più elevata, GB/s
    8.8 left arrow 8.2
    Valore medio nei test
SK Hynix HMT425S6AFR6A-PB 2GB Motivi da considerare
SK Hynix HMT425S6AFR6A-PB 2GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    28 left arrow 38
    Intorno -36% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M471B5273CH0-YK0 4GB
SK Hynix HMT425S6AFR6A-PB 2GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    38 left arrow 28
  • Velocità di lettura, GB/s
    12.6 left arrow 12.6
  • Velocità di scrittura, GB/s
    8.8 left arrow 8.2
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    2174 left arrow 1822

Samsung M471B5273CH0-YK0 4GB Confronto tra le RAM

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5273CH0-CK0 4GB

SK Hynix HMT425S6AFR6A-PB 2GB Confronto tra le RAM

Crucial Technology CT51264BF160BJ.C8F 4GB
SK Hynix HMT325S6CFR8C-PB 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Ultimi confronti

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