Samsung M471B5273CH0-YK0 4GB vs SK Hynix HMT425S6AFR6A-PB 2GB

Pontuação geral

Samsung M471B5273CH0-YK0 4GB

Samsung M471B5273CH0-YK0 4GB

Pontuação geral

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

Diferenças Especificações Comentários

Diferenças

Samsung M471B5273CH0-YK0 4GB

Razões a considerar
Samsung M471B5273CH0-YK0 4GB

Relatar um erro

Velocidade de escrita mais rápida, GB/s

8.8 8.2

Valor médio nos testes

SK Hynix HMT425S6AFR6A-PB 2GB

Razões a considerar
SK Hynix HMT425S6AFR6A-PB 2GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

28 38

Por volta de -36% menor latência

Especificações

Lista completa de especificações técnicas

Samsung M471B5273CH0-YK0 4GB

SK Hynix HMT425S6AFR6A-PB 2GB

Características principais

Tipo de memória

DDR3 DDR3
Latência em PassMark, ns

38 28
Velocidade de leitura, GB/s

12.6 12.6
Velocidade de escrita, GB/s

8.8 8.2
Largura de banda de memória, mbps

12800 12800

Other

Descrição

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Tempos / Velocidade do relógio

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Ranking PassMark (Quanto mais, melhor)

2174 1822

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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