A-DATA Technology DOVF1B163G2G 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

総合得点

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

総合得点

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

相違点仕様コメント

相違点

A-DATA Technology DOVF1B163G2G 2GB

考慮すべき理由
A-DATA Technology DOVF1B163G2G 2GB

バグを報告する

読み出し速度の高速化、GB/s

4 20.4

テスト平均値

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

考慮すべき理由
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

18 56

周辺 -211% 低遅延
書き込み速度の高速化、GB/s

17.2 1,925.7

テスト平均値
より高いメモリ帯域幅、mbps

19200 6400

周辺 3 高帯域

仕様

技術仕様の完全リスト

A-DATA Technology DOVF1B163G2G 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

56 18
読み出し速度、GB/s

4,315.2 20.4
書き込み速度、GB/秒

1,925.7 17.2
メモリ帯域幅、mbps

6400 19200

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

658 3814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

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Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F4-4000C17-8GTZRB 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Kingston KTP9W1-MID 16GB