A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-3600C16-16GTRS 16GB

総合得点

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

総合得点

G Skill Intl F4-3600C16-16GTRS 16GB

G Skill Intl F4-3600C16-16GTRS 16GB

相違点仕様コメント

相違点

A-DATA Technology DQVE1908 512MB

考慮すべき理由
A-DATA Technology DQVE1908 512MB

バグを報告する

読み出し速度の高速化、GB/s

2 18

テスト平均値

G Skill Intl F4-3600C16-16GTRS 16GB

考慮すべき理由
G Skill Intl F4-3600C16-16GTRS 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 66

周辺 -136% 低遅延
書き込み速度の高速化、GB/s

16.2 1,557.9

テスト平均値
より高いメモリ帯域幅、mbps

17000 6400

周辺 2.66 高帯域

仕様

技術仕様の完全リスト

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3600C16-16GTRS 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

66 28
読み出し速度、GB/s

2,775.5 18.0
書き込み速度、GB/秒

1,557.9 16.2
メモリ帯域幅、mbps

6400 17000

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
タイミング / クロック速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

382 3933

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Apacer Technology 78.BAGMD.AF20B 4GB

Apacer Technology 78.BAGMD.AF20B 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Shenzen Recadata Storage Technology 8GB

Shenzen Recadata Storage Technology 8GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

G Skill Intl F4-3200C22-16GRS 16GB

G Skill Intl F4-3200C22-16GRS 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston KHX3600C17D4/8GX 8GB

Kingston KHX3600C17D4/8GX 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Apacer Technology 78.CAGPW.40C0B 8GB

Apacer Technology 78.CAGPW.40C0B 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

SK Hynix HMA41GU7AFR8N-TF 8GB

SK Hynix HMA41GU7AFR8N-TF 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-3200C15-4GRKD 4GB

G Skill Intl F4-3200C15-4GRKD 4GB