Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Samsung M393B2G70DB0-CK0 16GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

総合得点

Samsung M393B2G70DB0-CK0 16GB

Samsung M393B2G70DB0-CK0 16GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

バグを報告する

より高いメモリ帯域幅、mbps

17000 12800

周辺 1.33% 高帯域

Samsung M393B2G70DB0-CK0 16GB

考慮すべき理由
Samsung M393B2G70DB0-CK0 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

31 35

周辺 -13% 低遅延
読み出し速度の高速化、GB/s

10.1 9.8

テスト平均値
書き込み速度の高速化、GB/s

10.0 7.9

テスト平均値

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Samsung M393B2G70DB0-CK0 16GB

主な特徴

メモリータイプ

DDR4 DDR3
PassMarkにおけるレイテンシー、ns

35 31
読み出し速度、GB/s

9.8 10.1
書き込み速度、GB/秒

7.9 10.0
メモリ帯域幅、mbps

17000 12800

Other

商品説明

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
タイミング / クロック速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 9-9-9-24 / 1600 MHz
ランキングPassMark（多ければ多いほど良い）

2126 2326

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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