Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M378A2K43DB1-CVF 16GB

総合得点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

総合得点

Samsung M378A2K43DB1-CVF 16GB

Samsung M378A2K43DB1-CVF 16GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 30

周辺 20% 低遅延

Samsung M378A2K43DB1-CVF 16GB

考慮すべき理由
Samsung M378A2K43DB1-CVF 16GB

バグを報告する

読み出し速度の高速化、GB/s

16.4 16

テスト平均値
書き込み速度の高速化、GB/s

13.1 12.5

テスト平均値
より高いメモリ帯域幅、mbps

23400 19200

周辺 1.22 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M378A2K43DB1-CVF 16GB

主な特徴

メモリータイプ

DDR4 DDR4
PassMarkにおけるレイテンシー、ns

24 30
読み出し速度、GB/s

16.0 16.4
書き込み速度、GB/秒

12.5 13.1
メモリ帯域幅、mbps

19200 23400

Other

商品説明

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
タイミング / クロック速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
ランキングPassMark（多ければ多いほど良い）

2925 3310

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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