Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Kingmax Semiconductor GSAF62F-D8---------- 4GB

総合得点

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

総合得点

Kingmax Semiconductor GSAF62F-D8---------- 4GB

Kingmax Semiconductor GSAF62F-D8---------- 4GB

相違点仕様コメント

相違点

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

考慮すべき理由
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

バグを報告する

Kingmax Semiconductor GSAF62F-D8---------- 4GB

考慮すべき理由
Kingmax Semiconductor GSAF62F-D8---------- 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

23 26

周辺 -13% 低遅延
読み出し速度の高速化、GB/s

15.9 12.3

テスト平均値
書き込み速度の高速化、GB/s

13.6 7.1

テスト平均値
より高いメモリ帯域幅、mbps

21300 10600

周辺 2.01 高帯域

仕様

技術仕様の完全リスト

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Kingmax Semiconductor GSAF62F-D8---------- 4GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

26 23
読み出し速度、GB/s

12.3 15.9
書き込み速度、GB/秒

7.1 13.6
メモリ帯域幅、mbps

10600 21300

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
タイミング / クロック速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

1952 2545

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Kingmax Semiconductor GSAF62F-D8---------- 4GB

Kingmax Semiconductor GSAF62F-D8---------- 4GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Corsair CMN32GX4M2Z4600C18 16GB

Corsair CMN32GX4M2Z4600C18 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

PUSKILL PJ16TFK1GM8 16GB

PUSKILL PJ16TFK1GM8 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

SK Hynix HMA82GU6DJR8N-VK 16GB

SK Hynix HMA82GU6DJR8N-VK 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Smart Modular SMS4TDC8C1K0446FCG 8GB

Smart Modular SMS4TDC8C1K0446FCG 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-3466C16-16GTZR 16GB

G Skill Intl F4-3466C16-16GTZR 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Team Group Inc. Team-Elite-2400 4GB

Team Group Inc. Team-Elite-2400 4GB

Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

G Skill Intl F4-2666C16-8GRB 8GB

G Skill Intl F4-2666C16-8GRB 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3000C15-4GTZ 4GB

G Skill Intl F4-3000C15-4GTZ 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

G Skill Intl F4-4000C18-32GVK 32GB

G Skill Intl F4-4000C18-32GVK 32GB