Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

総合得点

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

総合得点

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

相違点仕様コメント

相違点

Nanya Technology NT2GC64B8HC0NS-CG 2GB

考慮すべき理由
Nanya Technology NT2GC64B8HC0NS-CG 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 31

周辺 10% 低遅延

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

考慮すべき理由
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

バグを報告する

読み出し速度の高速化、GB/s

20.5 11.7

テスト平均値
書き込み速度の高速化、GB/s

15.5 8.4

テスト平均値
より高いメモリ帯域幅、mbps

25600 10600

周辺 2.42 高帯域

仕様

技術仕様の完全リスト

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

28 31
読み出し速度、GB/s

11.7 20.5
書き込み速度、GB/秒

8.4 15.5
メモリ帯域幅、mbps

10600 25600

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
タイミング / クロック速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

1578 3649

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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