Samsung M393B2G70BH0-YK0 16GB vs Patriot Memory (PDP Systems) 2800 C18 Series 16GB

総合得点

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

総合得点

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

相違点仕様コメント

相違点

Samsung M393B2G70BH0-YK0 16GB

考慮すべき理由
Samsung M393B2G70BH0-YK0 16GB

バグを報告する

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

考慮すべき理由
Patriot Memory (PDP Systems) 2800 C18 Series 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

31 63

周辺 -103% 低遅延
読み出し速度の高速化、GB/s

18 8.1

テスト平均値
書き込み速度の高速化、GB/s

15.2 7.5

テスト平均値
より高いメモリ帯域幅、mbps

19200 12800

周辺 1.5 高帯域

仕様

技術仕様の完全リスト

Samsung M393B2G70BH0-YK0 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

63 31
読み出し速度、GB/s

8.1 18.0
書き込み速度、GB/秒

7.5 15.2
メモリ帯域幅、mbps

12800 19200

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

1945 3040

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9905624-014.A00G 4GB

Kingston 9905624-014.A00G 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Crucial Technology BLS4G4D26BFSC.8FE 4GB

Crucial Technology BLS4G4D26BFSC.8FE 4GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Dust Leopard DDR4-2400 C17 4GB 4GB

Dust Leopard DDR4-2400 C17 4GB 4GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Crucial Technology CT32G4SFD832A.C16FE 32GB

Crucial Technology CT32G4SFD832A.C16FE 32GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Crucial Technology CT8G4DFD824A.M16FF 8GB

Crucial Technology CT8G4DFD824A.M16FF 8GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

Crucial Technology CT16G48C40U5.M8A1 16GB

Crucial Technology CT16G48C40U5.M8A1 16GB

Apacer Technology 78.C1GET.AU10C 8GB

Apacer Technology 78.C1GET.AU10C 8GB

Crucial Technology CT32G4DFD832A.M16FB 32GB

Crucial Technology CT32G4DFD832A.M16FB 32GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Kingston KHX3200C16D4/16GX 16GB

Kingston KHX3200C16D4/16GX 16GB