Transcend Information TS512MSK64W6H 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

総合得点

Transcend Information TS512MSK64W6H 4GB

Transcend Information TS512MSK64W6H 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

相違点仕様コメント

相違点

Transcend Information TS512MSK64W6H 4GB

考慮すべき理由
Transcend Information TS512MSK64W6H 4GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

27 29

周辺 -7% 低遅延
読み出し速度の高速化、GB/s

15.2 12.1

テスト平均値
書き込み速度の高速化、GB/s

10.2 8.0

テスト平均値
より高いメモリ帯域幅、mbps

19200 12800

周辺 1.5 高帯域

仕様

技術仕様の完全リスト

Transcend Information TS512MSK64W6H 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

29 27
読み出し速度、GB/s

12.1 15.2
書き込み速度、GB/秒

8.0 10.2
メモリ帯域幅、mbps

12800 19200

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

1989 2764

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

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Transcend Information TS512MSK64W6H 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N

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Apacer Technology 78.CAGR9.40C0B 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Kingston HX316C10F/8 8GB

G Skill Intl F4-3200C14-8GTRG 8GB

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