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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Comparar
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Netac Technology Co Ltd EKBLUE4162417AD 8GB
Pontuação geral
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Pontuação geral
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Diferenças
Especificações
Comentários
Diferenças
Razões a considerar
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Relatar um erro
Velocidade de escrita mais rápida, GB/s
12.5
12.0
Valor médio nos testes
Razões a considerar
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Relatar um erro
Velocidade de leitura mais rápida, GB/s
16.8
16
Valor médio nos testes
Especificações
Lista completa de especificações técnicas
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Características principais
Tipo de memória
DDR4
DDR4
Latência em PassMark, ns
24
24
Velocidade de leitura, GB/s
16.0
16.8
Velocidade de escrita, GB/s
12.5
12.0
Largura de banda de memória, mbps
19200
19200
Other
Descrição
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Tempos / Velocidade do relógio
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (Quanto mais, melhor)
2925
2946
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB Comparações de RAM
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB Comparações de RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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