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Micron Technology 16JTF51264HZ-1G6M1 4GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Nanya Technology NT4GC64B8HG0NS-DI 4GB

Pontuação geral
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Pontuação geral
star star star star star
Nanya Technology NT4GC64B8HG0NS-DI 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

Diferenças Especificações Comentários

Diferenças

Micron Technology 16JTF51264HZ-1G6M1 4GB Razões a considerar
Micron Technology 16JTF51264HZ-1G6M1 4GB
Relatar um erro
  • Abaixo da latência nos testes do PassMark, ns
    28 left arrow 45
    Por volta de 38% menor latência
Nanya Technology NT4GC64B8HG0NS-DI 4GB Razões a considerar
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Relatar um erro
  • Velocidade de leitura mais rápida, GB/s
    13 left arrow 12.9
    Valor médio nos testes

Especificações

Lista completa de especificações técnicas
Micron Technology 16JTF51264HZ-1G6M1 4GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Características principais
  • Tipo de memória
    DDR3 left arrow DDR3
  • Latência em PassMark, ns
    28 left arrow 45
  • Velocidade de leitura, GB/s
    12.9 left arrow 13.0
  • Velocidade de escrita, GB/s
    9.0 left arrow 9.0
  • Largura de banda de memória, mbps
    12800 left arrow 12800
Other
  • Descrição
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Tempos / Velocidade do relógio
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (Quanto mais, melhor)
    2112 left arrow 2079

Micron Technology 16JTF51264HZ-1G6M1 4GB Comparações de RAM

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB Comparações de RAM

SK Hynix HMA42GR7AFR4N-TF 16GB
Crucial Technology BL8G32C16S4B.8FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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