A-DATA Technology AD4S3200316G22-BHYD 16GB vs G Skill Intl F4-3200C15-8GTZKY 8GB

总分

A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

总分

G Skill Intl F4-3200C15-8GTZKY 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB

差异规格评论

差异

A-DATA Technology AD4S3200316G22-BHYD 16GB

需要考虑的原因
A-DATA Technology AD4S3200316G22-BHYD 16GB

报告一个错误

更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

G Skill Intl F4-3200C15-8GTZKY 8GB

需要考虑的原因
G Skill Intl F4-3200C15-8GTZKY 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 66

左右 -164% 更低的延时
更快的读取速度，GB/s

19.4 13.9

测试中的平均数值
更快的写入速度，GB/s

15.5 13.2

测试中的平均数值

规格

完整的技术规格清单

A-DATA Technology AD4S3200316G22-BHYD 16GB

G Skill Intl F4-3200C15-8GTZKY 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

66 25
读取速度，GB/s

13.9 19.4
写入速度，GB/s

13.2 15.5
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2429 3673

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1G70BH0-YK0 8GB

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Kingston 9905700-047.A00G 16GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Samsung M378A2K43BB1-CRC 16GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Crucial Technology CT16G4SFRA32A.C8FE 16GB

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Patriot Memory (PDP Systems) 3600 C16 Series 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Avant Technology W6451U67J5213NB 4GB

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Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CMD16GX4M4B3300C16 4GB

Corsair CMD16GX4M4B3300C16 4GB