A-DATA Technology AD4S3200316G22-BHYD 16GB vs Samsung M471A2K43EB1-CWE 16GB

总分

A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

总分

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

差异规格评论

差异

A-DATA Technology AD4S3200316G22-BHYD 16GB

需要考虑的原因
A-DATA Technology AD4S3200316G22-BHYD 16GB

报告一个错误

Samsung M471A2K43EB1-CWE 16GB

需要考虑的原因
Samsung M471A2K43EB1-CWE 16GB

报告一个错误

低于PassMark测试中的延时，ns

55 66

左右 -20% 更低的延时
更快的读取速度，GB/s

15.8 13.9

测试中的平均数值
更快的写入速度，GB/s

13.8 13.2

测试中的平均数值

规格

完整的技术规格清单

A-DATA Technology AD4S3200316G22-BHYD 16GB

Samsung M471A2K43EB1-CWE 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

66 55
读取速度，GB/s

13.9 15.8
写入速度，GB/s

13.2 13.8
内存带宽，mbps

25600 25600

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2429 2701

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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UMAX Technology D4-2400-4GB-512X8-L 4GB

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Samsung M378B5773DH0-CH9 2GB

SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB

SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Samsung M393A1G40DB1-CRC 8GB

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Kingston HP37D4U1S8ME-16XR 16GB