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A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BL4G24C16U4B.8FE 4GB

A-DATA Technology ADOVE1A0834E 1GB vs Crucial Technology BL4G24C16U4B.8FE 4GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Crucial Technology BL4G24C16U4B.8FE 4GB

Crucial Technology BL4G24C16U4B.8FE 4GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Crucial Technology BL4G24C16U4B.8FE 4GB 需要考虑的原因
Crucial Technology BL4G24C16U4B.8FE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 94
    左右 -169% 更低的延时
  • 更快的读取速度，GB/s
    14.8 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.1 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BL4G24C16U4B.8FE 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 35
  • 读取速度，GB/s
    1,882.0 left arrow 14.8
  • 写入速度，GB/s
    1,165.4 left arrow 11.1
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    305 left arrow 2566

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Crucial Technology BL4G24C16U4B.8FE 4GB RAM的比较

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BL4G24C16U4B.8FE 4GB
Crucial Technology BL4G24C16U4B.8FE 4GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Corsair CMD16GX4M4B3333C16 4GB
Corsair CMD16GX4M4B3333C16 4GB
内存RAM
Kingston KHX3600C17D4/8GX 8GB
Kingston KHX3600C17D4/8GX 8GB
A-DATA Technology AD4S320038G22-B 8GB
A-DATA Technology AD4S320038G22-B 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
G Skill Intl F4-3466C18-8GSXW 8GB
G Skill Intl F4-3466C18-8GSXW 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Samsung M391A2K43BB1-CRC 16GB
Samsung M391A2K43BB1-CRC 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Kllisre 99P5428-002.A00LF 8GB
Kllisre 99P5428-002.A00LF 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Kingston X0N6VG-HYD2 16GB
Kingston X0N6VG-HYD2 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
内存RAM
Samsung M471B1G73EB0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
V-Color Technology Inc. TN48G26S819-SB 8GB
V-Color Technology Inc. TN48G26S819-SB 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
Kingston XW21KG-MIE2 8GB
Kingston XW21KG-MIE2 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Panram International Corporation L421008G4C1528K34O8A 8GB
Panram International Corporation L421008G4C1528K34O8A 8
内存RAM