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A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB

A-DATA Technology ADOVE1A0834E 1GB vs Micron Technology 18ASF2G72PDZ-2G3B1 16GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Micron Technology 18ASF2G72PDZ-2G3B1 16GB 需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    57 left arrow 94
    左右 -65% 更低的延时
  • 更快的读取速度，GB/s
    9.5 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.4 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 57
  • 读取速度，GB/s
    1,882.0 left arrow 9.5
  • 写入速度，GB/s
    1,165.4 left arrow 7.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    305 left arrow 2213

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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