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A-DATA Technology ADOVE1A0834E 1GB
Samsung M378A5244CB0-CRC 4GB

A-DATA Technology ADOVE1A0834E 1GB vs Samsung M378A5244CB0-CRC 4GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Samsung M378A5244CB0-CRC 4GB

Samsung M378A5244CB0-CRC 4GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Samsung M378A5244CB0-CRC 4GB 需要考虑的原因
Samsung M378A5244CB0-CRC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 94
    左右 -161% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Samsung M378A5244CB0-CRC 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 36
  • 读取速度，GB/s
    1,882.0 left arrow 15.0
  • 写入速度，GB/s
    1,165.4 left arrow 10.6
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    305 left arrow 2247

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Samsung M378A5244CB0-CRC 4GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Samsung M378A5244CB0-CRC 4GB
Samsung M378A5244CB0-CRC 4GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Jinyu CL16-16-16 D4-2400 8GB
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
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A-DATA Technology AM2U16BC4P2-B05B 4GB
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Corsair CMW64GX4M2E3200C16 32GB
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PUSKILL PJ8TFK1GM8 8GB
PUSKILL PJ8TFK1GM8 8GB
Samsung M378A1G44AB0-CWE 8GB
Samsung M378A1G44AB0-CWE 8GB
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SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
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Teikon TMA41GU6AFR8N-TFSC 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
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内存RAM
Samsung DDR3 8GB 1600MHz 8GB
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Gloway International (HK) STK4U2400D15082C 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3866C18-4GTZ 4GB
G Skill Intl F4-3866C18-4GTZ 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Corsair CMK8GX4M2A2400C14 4GB
内存RAM
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Nanya Technology M2Y51264TU88A2B-3C 512MB
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Kingston 9965640-035.C00G 32GB
内存RAM