A-DATA Technology AM2U16BC4P2-B05B 4GB vs Crucial Technology BLS16G4D26BFSB.16FBD 16GB

总分

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

总分

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

差异规格评论

差异

A-DATA Technology AM2U16BC4P2-B05B 4GB

需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB

报告一个错误

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

需要考虑的原因
Crucial Technology BLS16G4D26BFSB.16FBD 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 26

左右 -18% 更低的延时
更快的读取速度，GB/s

17.9 14

测试中的平均数值
更快的写入速度，GB/s

12.6 9.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2U16BC4P2-B05B 4GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 22
读取速度，GB/s

14.0 17.9
写入速度，GB/s

9.1 12.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2330 3152

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Corsair CMD64GX4M8X4000C19 8GB

Corsair CMD64GX4M8X4000C19 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Golden Empire CL18-20-20 D4-3200 8GB

Golden Empire CL18-20-20 D4-3200 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-4000C16-16GTRS 16GB

G Skill Intl F4-4000C16-16GTRS 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology 78.C1GMM.AUF0B 8GB

Apacer Technology 78.C1GMM.AUF0B 8GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Mushkin MRA4S320GJJM32G 32GB

Mushkin MRA4S320GJJM32G 32GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Transcend Information JM3200HLB-8G 8GB

Transcend Information JM3200HLB-8G 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

SK Hynix HMT351S6EFR8C-PB 4GB

SK Hynix HMT351S6EFR8C-PB 4GB

SK Hynix HMT41GS6MFR8C-PB 8GB

SK Hynix HMT41GS6MFR8C-PB 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-4400C19-8GTZKK 8GB

G Skill Intl F4-4400C19-8GTZKK 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Kingston 9905701-017.A00G 16GB

Kingston 9905701-017.A00G 16GB