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A-DATA Technology DDR3 1866 2OZ 4GB
Samsung M471A2K43DB1-CWE 16GB

A-DATA Technology DDR3 1866 2OZ 4GB vs Samsung M471A2K43DB1-CWE 16GB

总分
star star star star star
A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

总分
star star star star star
Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

差异 规格 评论

差异

A-DATA Technology DDR3 1866 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR3 1866 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 37
    左右 43% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 15.8
    测试中的平均数值
Samsung M471A2K43DB1-CWE 16GB 需要考虑的原因
Samsung M471A2K43DB1-CWE 16GB
报告一个错误
  • 更快的写入速度，GB/s
    13.5 left arrow 10.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR3 1866 2OZ 4GB
Samsung M471A2K43DB1-CWE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 37
  • 读取速度，GB/s
    17.8 left arrow 15.8
  • 写入速度，GB/s
    10.0 left arrow 13.5
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2771 left arrow 3075

A-DATA Technology DDR3 1866 2OZ 4GB RAM的比较

A-DATA Technology DDR3 1600G 4GB
G Skill Intl F4-2133C15-8GRB 8GB

Samsung M471A2K43DB1-CWE 16GB RAM的比较

Kingston MSI26D4S9D8ME-16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMD64GX4M8A2666C15 8GB
Corsair CMD64GX4M8A2666C15 8GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
G Skill Intl F4-2133C15-8GRB 8GB
G Skill Intl F4-2133C15-8GRB 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMR32GX4M2C3000C15 16GB
Corsair CMR32GX4M2C3000C15 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston 9905678-102.A00G 8GB
Kingston 9905678-102.A00G 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Samsung V-GeN D4S8GL32A8TL 8GB
Samsung V-GeN D4S8GL32A8TL 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CB8GU2666.C8ET 8GB
Crucial Technology CB8GU2666.C8ET 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Heoriady M471A1K43BB1-CRC 16GB
Heoriady M471A1K43BB1-CRC 16GB
内存RAM
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F5-6000J3636F16G 16GB
Samsung V-GeN D4S8GL32A8TL 8GB
Samsung V-GeN D4S8GL32A8TL 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Apacer Technology 78.C2GFK.AR20B 8GB
Apacer Technology 78.C2GFK.AR20B 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA82GU6DJR8N-XN 16GB
SK Hynix HMA82GU6DJR8N-XN 16GB
内存RAM