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A-DATA Technology DDR4 2400 2OZ 8GB
A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 2400 2OZ 8GB vs A-DATA Technology DDR4 3200 2OZ 4GB

总分
star star star star star
A-DATA Technology DDR4 2400 2OZ 8GB

A-DATA Technology DDR4 2400 2OZ 8GB

总分
star star star star star
A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

差异 规格 评论

差异

A-DATA Technology DDR4 2400 2OZ 8GB 需要考虑的原因
A-DATA Technology DDR4 2400 2OZ 8GB
报告一个错误
A-DATA Technology DDR4 3200 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 3200 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 34
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 15.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
A-DATA Technology DDR4 2400 2OZ 8GB
A-DATA Technology DDR4 3200 2OZ 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 29
  • 读取速度，GB/s
    15.8 left arrow 17.2
  • 写入速度，GB/s
    11.8 left arrow 13.8
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2917 left arrow 3409

A-DATA Technology DDR4 2400 2OZ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

A-DATA Technology DDR4 3200 2OZ 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DDR4 2400 2OZ 8GB
A-DATA Technology DDR4 2400 2OZ 8GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Micron Technology AFLD48VH1P 8GB
Micron Technology AFLD48VH1P 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-2666C16-8GRB 8GB
G Skill Intl F4-2666C16-8GRB 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-4000C18-8GTRS 8GB
G Skill Intl F4-4000C18-8GTRS 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
V-GEN D4M8GL26A8TS6 8GB
V-GEN D4M8GL26A8TS6 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2400C16-16GFT 16GB
G Skill Intl F4-2400C16-16GFT 16GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Samsung M393A2K43DB3-CWE 16GB
Samsung M393A2K43DB3-CWE 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-4133C19-8GTZRF 8GB
G Skill Intl F4-4133C19-8GTZRF 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3333C16-16GVK 16GB
G Skill Intl F4-3333C16-16GVK 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-2800C14-16GVK 16GB
G Skill Intl F4-2800C14-16GVK 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Gloway International (HK) STK4U2400D17081C 8GB
Gloway International (HK) STK4U2400D17081C 8GB
内存RAM