A-DATA Technology DQKD1A08 1GB vs Mushkin MR[A/B]4U300JJJM16G 16GB

总分

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分

Mushkin MR[A/B]4U300JJJM16G 16GB

Mushkin MR[A/B]4U300JJJM16G 16GB

差异规格评论

差异

A-DATA Technology DQKD1A08 1GB

需要考虑的原因
A-DATA Technology DQKD1A08 1GB

报告一个错误

更快的读取速度，GB/s

2 17.3

测试中的平均数值

Mushkin MR[A/B]4U300JJJM16G 16GB

需要考虑的原因
Mushkin MR[A/B]4U300JJJM16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 52

左右 -93% 更低的延时
更快的写入速度，GB/s

14.5 1,145.9

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQKD1A08 1GB

Mushkin MR[A/B]4U300JJJM16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 27
读取速度，GB/s

2,614.5 17.3
写入速度，GB/s

1,145.9 14.5
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

409 3528

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-061.A00LF 2GB

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Corsair CMK16GX4M4B3866C18 4GB

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Corsair CMT16GX4M2C3200C14 8GB

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Samsung M393B5170FH0-CK0 4GB

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Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

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Transcend Information TS512MSK64W6H 4GB

Apacer Technology 78.CAGN7.4000C 8GB

Apacer Technology 78.CAGN7.4000C 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

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Transcend Information JM2666HSE-16G 16GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Micron Technology 8G2666CL19 8GB

Micron Technology 8G2666CL19 8GB

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Nanya Technology M2X4G64CB88CHN-DG 4GB

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Kingmax Semiconductor GLLF62F-DA---------- 4GB

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Samsung M393B2G70BH0-CK0 16GB

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InnoDisk Corporation M4UI-AGS1KC0K-C 16GB