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A-DATA Technology DQKD1A08 1GB
Samsung M393A2K40CB2-CTD 16GB

A-DATA Technology DQKD1A08 1GB vs Samsung M393A2K40CB2-CTD 16GB

总分
star star star star star
A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分
star star star star star
Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB

差异 规格 评论

差异

A-DATA Technology DQKD1A08 1GB 需要考虑的原因
A-DATA Technology DQKD1A08 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 10
    测试中的平均数值
Samsung M393A2K40CB2-CTD 16GB 需要考虑的原因
Samsung M393A2K40CB2-CTD 16GB
报告一个错误
  • 更快的写入速度，GB/s
    7.3 left arrow 1,145.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 4200
    左右 5.07 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQKD1A08 1GB
Samsung M393A2K40CB2-CTD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 52
  • 读取速度，GB/s
    2,614.5 left arrow 10.0
  • 写入速度，GB/s
    1,145.9 left arrow 7.3
  • 内存带宽，mbps
    4200 left arrow 21300
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    409 left arrow 2306

A-DATA Technology DQKD1A08 1GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T2864AZ3-CE6 1GB

Samsung M393A2K40CB2-CTD 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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内存RAM
A-DATA Technology DQKD1A08 1GB
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Samsung M393A2K40CB2-CTD 16GB
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内存RAM
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内存RAM
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内存RAM
Samsung M393B1G70BH0-CK0 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston 99U5584-001.A00LF 4GB
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G Skill Intl F4-3400C16-8GTZ 8GB
内存RAM