A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-3333C16-16GTZB 16GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

G Skill Intl F4-3333C16-16GTZB 16GB

G Skill Intl F4-3333C16-16GTZB 16GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

G Skill Intl F4-3333C16-16GTZB 16GB

需要考虑的原因
G Skill Intl F4-3333C16-16GTZB 16GB

报告一个错误

低于PassMark测试中的延时，ns

19 66

左右 -247% 更低的延时
更快的读取速度，GB/s

20.8 2

测试中的平均数值
更快的写入速度，GB/s

17.1 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3333C16-16GTZB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 19
读取速度，GB/s

2,775.5 20.8
写入速度，GB/s

1,557.9 17.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 3821

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DPT5MK8-TATP 2GB

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ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

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Samsung M393B2G70BH0-CK0 16GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

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Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

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Samsung M471B5173DB0-YK0 4GB

AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

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Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB