A-DATA Technology DQVE1908 512MB vs Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 66

左右 -154% 更低的延时
更快的读取速度，GB/s

23.1 2

测试中的平均数值
更快的写入速度，GB/s

19.0 1,557.9

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 26
读取速度，GB/s

2,775.5 23.1
写入速度，GB/s

1,557.9 19.0
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 3
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

382 4276

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT4G4DFS8266.C8FB 4GB

Crucial Technology CT4G4DFS8266.C8FB 4GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

G Skill Intl F3-17000CL11-4GBXL 4GB

G Skill Intl F3-17000CL11-4GBXL 4GB

G Skill Intl F4-4266C17-16GVKB 16GB

G Skill Intl F4-4266C17-16GVKB 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Samsung M378A2K43CB1-CTD 16GB

Samsung M378A2K43CB1-CTD 16GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F4-3000C16-16GISB 16GB

G Skill Intl F4-3000C16-16GISB 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston 99U5702-101.A00G 8GB

Kingston 99U5702-101.A00G 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Apacer Technology GD2.22428S.001 8GB

Apacer Technology GD2.22428S.001 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Kingston KHX2400C15S4/4G 4GB

Kingston KHX2400C15S4/4G 4GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Corsair CMD32GX4M4B2400C10 8GB

Corsair CMD32GX4M4B2400C10 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology CT8G4DFS8266.C8FE 8GB

Crucial Technology CT8G4DFS8266.C8FE 8GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Samsung V-GeN D4S8GL24A8 8GB

Samsung V-GeN D4S8GL24A8 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology AM1P26KC4U1-BACS 4GB

A-DATA Technology AM1P26KC4U1-BACS 4GB

Samsung M393B1K70DH0-YH9 8GB

Samsung M393B1K70DH0-YH9 8GB

Samsung M392B1K70CM0-YH9 8GB

Samsung M392B1K70CM0-YH9 8GB