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A-DATA Technology DQVE1908 512MB
Samsung M386A8K40BMB-CPB 64GB

A-DATA Technology DQVE1908 512MB vs Samsung M386A8K40BMB-CPB 64GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
Samsung M386A8K40BMB-CPB 64GB

Samsung M386A8K40BMB-CPB 64GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
Samsung M386A8K40BMB-CPB 64GB 需要考虑的原因
Samsung M386A8K40BMB-CPB 64GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 66
    左右 -89% 更低的延时
  • 更快的读取速度，GB/s
    9.1 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Samsung M386A8K40BMB-CPB 64GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 35
  • 读取速度，GB/s
    2,775.5 left arrow 9.1
  • 写入速度，GB/s
    1,557.9 left arrow 8.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    382 left arrow 2229

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

Samsung M386A8K40BMB-CPB 64GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston ACR256X64D3S1333C9 2GB
Kingston KHX2400C15S4/16G 16GB
Kingston KHX2400C15S4/16G 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Golden Empire CL16-16-16 D4-2800 8GB
Golden Empire CL16-16-16 D4-2800 8GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
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Apacer Technology 78.CAGPW.40C0B 8GB
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SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
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Corsair CMK16GX4M2D3600C16 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
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内存RAM
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Patriot Memory (PDP Systems) 2400 C16 Series 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
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内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
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内存RAM
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Samsung M393B5170FH0-CK0 4GB
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内存RAM
Kingston 9905403-437.A01LF 4GB
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内存RAM
G Skill Intl F3-1600C11-8GIS 8GB
G Skill Intl F3-1600C11-8GIS 8GB
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Samsung M393A2K43BB1-CRC 16GB
内存RAM
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内存RAM
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内存RAM