A-DATA Technology DQVE1908 512MB vs Samsung M391A2K43BB1-CRC 16GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Samsung M391A2K43BB1-CRC 16GB

Samsung M391A2K43BB1-CRC 16GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 17

测试中的平均数值

Samsung M391A2K43BB1-CRC 16GB

需要考虑的原因
Samsung M391A2K43BB1-CRC 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 66

左右 -175% 更低的延时
更快的写入速度，GB/s

12.9 1,557.9

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Samsung M391A2K43BB1-CRC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 24
读取速度，GB/s

2,775.5 17.0
写入速度，GB/s

1,557.9 12.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

382 3151

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Samsung M391A2K43BB1-CRC 16GB

Samsung M391A2K43BB1-CRC 16GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Crucial Technology CT4G4DFS824A.M8FF 4GB

Crucial Technology CT4G4DFS824A.M8FF 4GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Essencore Limited KD48GU881-26N190D 8GB

Essencore Limited KD48GU881-26N190D 8GB

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Corsair CM4X16GE2933C19S2 16MB

Corsair CM4X16GE2933C19S2 16MB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F4-3000C15-8GVS 8GB

G Skill Intl F4-3000C15-8GVS 8GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Corsair CM4X16GD3200C16K4E 16GB

Corsair CM4X16GD3200C16K4E 16GB

Kingston 99U5403-492.A00LF 8GB

Kingston 99U5403-492.A00LF 8GB

Samsung V-GeN D4S8GL24A8 8GB

Samsung V-GeN D4S8GL24A8 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-2400C17-4GIS 4GB

G Skill Intl F4-2400C17-4GIS 4GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Avant Technology J641GU42J7240N3 8GB

Avant Technology J641GU42J7240N3 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Crucial Technology CT16G4DFD8213.M16FA 16GB

Crucial Technology CT16G4DFD8213.M16FA 16GB