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A-DATA Technology DQVE1B16 2GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

A-DATA Technology DQVE1B16 2GB vs OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

总分
star star star star star
A-DATA Technology DQVE1B16 2GB

A-DATA Technology DQVE1B16 2GB

总分
star star star star star
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

差异 规格 评论

差异

A-DATA Technology DQVE1B16 2GB 需要考虑的原因
A-DATA Technology DQVE1B16 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,285.0 left arrow 10.6
    测试中的平均数值
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB 需要考虑的原因
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 68
    左右 -127% 更低的延时
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1B16 2GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 30
  • 读取速度，GB/s
    4,165.3 left arrow 16.0
  • 写入速度，GB/s
    2,285.0 left arrow 10.6
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    784 left arrow 3026

A-DATA Technology DQVE1B16 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Corsair CMD8GX4M2B3466C18 4GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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