A-DATA Technology VDQVE1B16 2GB vs Kingston 9905744-062.A00G 32GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Kingston 9905744-062.A00G 32GB

Kingston 9905744-062.A00G 32GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 56

左右 18% 更低的延时
更快的读取速度，GB/s

4 16.2

测试中的平均数值
更快的写入速度，GB/s

2,061.2 15.3

测试中的平均数值

Kingston 9905744-062.A00G 32GB

需要考虑的原因
Kingston 9905744-062.A00G 32GB

报告一个错误

更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Kingston 9905744-062.A00G 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 56
读取速度，GB/s

4,937.3 16.2
写入速度，GB/s

2,061.2 15.3
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

759 2851

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905471-002.A00LF 2GB

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G Skill Intl F4-4266C19-4GTZ 4GB

Samsung M471B5173QH0-YK0 4GB

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

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Corsair CMK64GX4M4K3733C17 16GB

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

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G Skill Intl F4-4000C15-8GTZR 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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A-DATA Technology DQKD1A08 1GB

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Chun Well Technology Holding Limited CL18-22-22 D4-3600