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AMD R332G1339U1S 2GB
Samsung M3 78T5663RZ3-CF7 2GB

AMD R332G1339U1S 2GB vs Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
AMD R332G1339U1S 2GB

AMD R332G1339U1S 2GB

总分
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

差异 规格 评论

差异

AMD R332G1339U1S 2GB 需要考虑的原因
AMD R332G1339U1S 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 65
    左右 62% 更低的延时
  • 更快的读取速度，GB/s
    9.2 left arrow 4
    测试中的平均数值
  • 更快的写入速度，GB/s
    4.1 left arrow 2,784.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    10600 left arrow 6400
    左右 1.66% 更高的带宽
Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误

规格

完整的技术规格清单
AMD R332G1339U1S 2GB
Samsung M3 78T5663RZ3-CF7 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR2
  • PassMark中的延时，ns
    25 left arrow 65
  • 读取速度，GB/s
    9.2 left arrow 4,806.8
  • 写入速度，GB/s
    4.1 left arrow 2,784.6
  • 内存带宽，mbps
    10600 left arrow 6400
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    1096 left arrow 932

AMD R332G1339U1S 2GB RAM的比较

Elpida EBJ21UE8BFU0-DJ-F 2GB
SK Hynix HMA82GS6CJR8N-UH 16GB

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Essencore Limited KD4AGSA8A-32N2200 16GB
内存RAM
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Nanya Technology NT4GC72B4NA1NL-CG 4GB
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G Skill Intl F4-4266C19-8GTZSW 8GB
内存RAM
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Nanya Technology NT4GC72B4NA1NL-CG 4GB
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内存RAM
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内存RAM
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Kingston XVTW4H-MIE 32GB
内存RAM