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AMD R5316G1609U2K 8GB
Apacer Technology 78.B1GM3.C7W0B 4GB

AMD R5316G1609U2K 8GB vs Apacer Technology 78.B1GM3.C7W0B 4GB

总分
star star star star star
AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分
star star star star star
Apacer Technology 78.B1GM3.C7W0B 4GB

Apacer Technology 78.B1GM3.C7W0B 4GB

差异 规格 评论

差异

AMD R5316G1609U2K 8GB 需要考虑的原因
AMD R5316G1609U2K 8GB
报告一个错误
Apacer Technology 78.B1GM3.C7W0B 4GB 需要考虑的原因
Apacer Technology 78.B1GM3.C7W0B 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 73
    左右 -204% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 6.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.4 left arrow 5.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD R5316G1609U2K 8GB
Apacer Technology 78.B1GM3.C7W0B 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 24
  • 读取速度，GB/s
    6.3 left arrow 16.0
  • 写入速度，GB/s
    5.2 left arrow 11.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1309 left arrow 2280

AMD R5316G1609U2K 8GB RAM的比较

Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB

Apacer Technology 78.B1GM3.C7W0B 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Apacer Technology 78.B1GM3.C7W0B 4GB
Apacer Technology 78.B1GM3.C7W0B 4GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
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内存RAM
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SK Hynix HYMP125S64CP8-S6 2GB
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内存RAM
Samsung M378B5273DH0-CH9 4GB
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Micron Technology 16ATF2G64HZ-2G6E1 16GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
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内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT4G4DFS8213.C8FBR2 4GB
Crucial Technology CT4G4DFS8213.C8FBR2 4GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMD32GX4M4A2800C16 8GB
Corsair CMD32GX4M4A2800C16 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Apacer Technology 78.D2GF2.AU30B 16GB
Apacer Technology 78.D2GF2.AU30B 16GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Corsair CMD128GX4M8A2400C14 16GB
Corsair CMD128GX4M8A2400C14 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT16G4DFD824A.C16FBD 16GB
Crucial Technology CT16G4DFD824A.C16FBD 16GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-2400C16-8GIS 8GB
G Skill Intl F4-2400C16-8GIS 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3466C16-16GTZR 16GB
G Skill Intl F4-3466C16-16GTZR 16GB
内存RAM