AMD R5316G1609U2K 8GB vs Corsair CMSX16GX4M2A3200C22 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Corsair CMSX16GX4M2A3200C22 8GB

Corsair CMSX16GX4M2A3200C22 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Corsair CMSX16GX4M2A3200C22 8GB

需要考虑的原因
Corsair CMSX16GX4M2A3200C22 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 73

左右 -83% 更低的延时
更快的读取速度，GB/s

16.8 6.3

测试中的平均数值
更快的写入速度，GB/s

14.0 5.2

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Corsair CMSX16GX4M2A3200C22 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 40
读取速度，GB/s

6.3 16.8
写入速度，GB/s

5.2 14.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1309 3015

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

SK Hynix HMA451R7AFR8N-UH 4GB

SK Hynix HMA451R7AFR8N-UH 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

G Skill Intl F4-4266C17-8GTZR 8GB

G Skill Intl F4-4266C17-8GTZR 8GB

Kingston 9965525-058.A00LF 8GB

Kingston 9965525-058.A00LF 8GB

Kingston 9905701-011.A00G 16GB

Kingston 9905701-011.A00G 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

G Skill Intl F4-2400C17-4GIS 4GB

G Skill Intl F4-2400C17-4GIS 4GB

Kingston 99U5471-030.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

Corsair CMWX16GC3000C15W4 16GB

Corsair CMWX16GC3000C15W4 16GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

SK Hynix HMT451S6DFR8A-PB 4GB

SK Hynix HMT451S6DFR8A-PB 4GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

G Skill Intl F4-2133C15-8GFXR 8GB

G Skill Intl F4-2133C15-8GFXR 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology CT8G4DFS824A.M8FH 8GB

Crucial Technology CT8G4DFS824A.M8FH 8GB