AMD R5316G1609U2K 8GB vs Crucial Technology CT16G4SFS8266.C8FE 16GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Crucial Technology CT16G4SFS8266.C8FE 16GB

Crucial Technology CT16G4SFS8266.C8FE 16GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Crucial Technology CT16G4SFS8266.C8FE 16GB

需要考虑的原因
Crucial Technology CT16G4SFS8266.C8FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 73

左右 -97% 更低的延时
更快的读取速度，GB/s

15.7 6.3

测试中的平均数值
更快的写入速度，GB/s

12.7 5.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Crucial Technology CT16G4SFS8266.C8FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 37
读取速度，GB/s

6.3 15.7
写入速度，GB/s

5.2 12.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1309 2971

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R748G2606U2S 8GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Crucial Technology BLS16G4D30AESE.M16FE 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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G Skill Intl F4-2400C17-8GSXK 8GB

Team Group Inc. TEAMGROUP-UD3-2400 8GB

Team Group Inc. TEAMGROUP-UD3-2400 8GB

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Corsair CMSX16GX4M2A3200C22 8GB

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Kingston 99U5584-005.A00LF 4GB

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G Skill Intl F4-3200C16-16GTZKW 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Corsair CMU32GX4M2C3333C16 16GB

Corsair CMU32GX4M2C3333C16 16GB