AMD R5316G1609U2K 8GB vs Crucial Technology CT8G4SFS8213.C8FDR1 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Crucial Technology CT8G4SFS8213.C8FDR1 8GB

Crucial Technology CT8G4SFS8213.C8FDR1 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Crucial Technology CT8G4SFS8213.C8FDR1 8GB

需要考虑的原因
Crucial Technology CT8G4SFS8213.C8FDR1 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 73

左右 -170% 更低的延时
更快的读取速度，GB/s

13.6 6.3

测试中的平均数值
更快的写入速度，GB/s

10.8 5.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Crucial Technology CT8G4SFS8213.C8FDR1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 27
读取速度，GB/s

6.3 13.6
写入速度，GB/s

5.2 10.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1309 2418

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M4 70T5663CZ3-CE6 2GB

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Mushkin MR[A/B]4U280HHHH8G 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

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AMD R5S38G1601U2S 8GB

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G Skill Intl F4-3200C16-4GVRB 4GB

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SK Hynix HMT351S6CFR8C-PB 4GB

Crucial Technology BLS8G4D240FSA.16FARG 8GB

Crucial Technology BLS8G4D240FSA.16FARG 8GB